Structural properties and variable-range hopping conductivity of Cu2SnS3
Structural properties and variable-range hopping conductivity of Cu2SnS3
In the present work, we investigated the elemental composition, structural and electrical properties of Cu2SnS3 (CTS) ternary semiconductor synthesized by the pyrolytic decomposition of the precursors in vacuum. The molar ratio of Sn/Cu in the precursor solution was varied from 0.2 to 0.6. The x-ray diffraction and Raman analyses confirmed that the synthesized samples mainly consist of tetragonal CTS phase with space group The dependence of the conductivity of CTS samples on temperature was investigated in the temperature range 10-300 K. A crossover between nearest-neighbor hopping and Mott variable-range hopping conduction mechanisms were observed at
Analysis of the data yielded the values of the relative acceptor concentration
with the critical concentration of the metal–insulator transition (MIT)
cm−3, the localization radius
with the Bohr radius
the dielectric permittivity far from the MIT κ0 = 10.7, the mean acceptor energy
meV and the mean density of the localized states
meV−1cm−3.