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Impact of fatigue behavior on energy storage performance in dielectric thin-film capacitors


Minh D.Nguyen

Source title: 
Journal of the European Ceramic Society, 40(5): 1886-1895, 2020 (ISI)
Academic year of acceptance: 

The polarization hysteresis loops and the dynamics of domain switching in ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT), antiferroelectric PbZrO3 (PZ) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films deposited on Pt/Ti/SiO2/Si substrates were investigated under various bipolar electric fields during repetitive switching cycles. Fatigue behavior was observed in PZT thin films and was accelerated at higher bipolar electric fields. Degradation of energy storage performance observed in PZ thin films corresponds to the appearance of a ferroelectric state just under a high bipolar electric field, which could be related to the nonuniform strain buildup in some regions within bulk PZ. Meanwhile, PLZT thin films demonstrated fatigue-free in both polarization and energy storage performance and independent bipolar electric fields, which are probably related to the highly dynamic polar nanodomains. More importantly, PLZT thin films also exhibited excellent recoverable energy-storage density and energy efficiency, extracted from the polarization hysteresis loops, making them promising dielectric capacitors for energy-storage applications.