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Ultrahigh energy-storage performance in lead-free BZT thin-films by tuning relaxor behavior


Minh D. Nguyen

Source title: 
Materials Research Bulletin, 133: 111072, 2020 (ISI)
Academic year of acceptance: 

Relaxor ferroelectric thin films show excellent energy-storage performance for pulse-power applications. In this study, La-doped Ba1-xLax(Zr0.25Ti0.75)O3 (BLZT, x = 0–8%) thin films were grown on LaNiO3 buffered Ca2Nb3O10-nanosheet/Si substrates. BLZT thin films indicate prominently increasing relaxor behavior with increasing La-doping concentration, which is conducive to obtaining a very slim polarization hysteresis loop with a low remanent polarization and a high breakdown strength. As a result, BLZT thin films with 5 mol.% La-doping simultaneously exhibit a great 72.2 J/cm3 recoverable energy-storage density and a large 78.6% energy-storage efficiency under a high 3.8 MV/cm breakdown strength. These results present a promising environmentally friendly candidate for the next generation of advanced energy-storage capacitor applications.